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 RB205T-60
Diodes
Schottky barrier diode
RB205T-60
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
1.2
1.3 0.8 (1) (2) (3)
13.5MIN
Construction Silicon epitaxial planar
5.00.2
8.00.2 12.00.2
15.00.4 0.2 8.0
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
10.00.3 0.1
2.80.2 0.1
0.70.1 0.05
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc)(*1) Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 15 100 150 -40 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.58 600 2.0 Unit V A /W Conditions IF=7.5A VR=60V junction to case
Rev.B
1/3
RB205T-60
Diodes
Electrical characteristic curves
10 Ta=150 10000 Ta=125 FORWARD CURRENT:IF(A) 1 Ta=75 Ta=-25 REVERSE CURRENT:IR(uA) Ta=25 1000 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=-25 100000 Ta=150 Ta=125 Ta=75 1000 10000 f=1MHz
Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
0.1
10
0.01
560 Ta=25 IF=7.5A n=30pcs
200 180 160 REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 AVE:40.6uA Ta=25 VR=60V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1350 1340 1330 1320 1310 1300 1290 1280 1270 1260 1250 AVE:1290.5pF Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
550
540
530 AVE:537.0mV 520
510
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300 RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50 0 IFSM DISRESION MAP AVE:168.0A Ifsm 8.3ms 1cyc
30 25 20 15 10 5 0 trr DISPERSION MAP AVE:16.0ns Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc
10
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t
100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Mounted on epoxy board
20
IM=100mA time
IF=7.5A D=1/2 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a)
300us 10 1ms
DC
Sin(180) 10
100
1
Rth(j-c)
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 20 25
Rev.B
2/3
RB205T-60
Diodes
5 40 0A 0V 30 DC 20 D=1/2 Io VR D=t/T VR=30V Tj=150 40 0A 0V Io t T VR D=t/T VR=30V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
4
t T
30 DC 20 D=1/2
REVERSE POWER DISSIPATION:PR (W)
3
DC D=1/2
2
Sin(180)
1
10
Sin(180)
10
Sin(180)
0 0 20 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60
0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150
0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150
30
ELECTROSTATIC DISCHARGE TEST ESD(KV)
No break at 30kV 25
20
15 AVE:15.6kV 10
5
0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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